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| NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 - APRIL 2002 FEATURES * 400 Volt VCEO * 0.5 Amp continuous current * Ptot=1 Watt APPLICATIONS * Telephone dialler circuits ZTX658 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at T amb=25C derate above 25C Operating and Storage Temperature Range SYMBOL V CBO V CEO V EBO I CM IC P tot T j:T stg 400 400 5 1 500 1 5.7 E-Line TO92 Compatible VALUE UNIT V V V A mA W mW/ C C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector Cut-Off Current SYMBOL MIN. V (BR)CBO V (BR)CEO) V (BR)EBO I CBO I CBO 400 400 5 100 100 100 0.3 0.25 0.5 0.9 0.9 50 50 40 TYP. MAX. UNIT V V V nA nA nA V V V V V CONDITIONS. I C=100A I C=10mA* I E=100A V CB=320V V CE=320V V EB=4V I C=20mA, I B=1mA I C=50mA, I B=5mA* I C=100mA, I B=10mA* I C=100mA, I B=10mA* IC=100mA, V CE=5V* I C=1mA, V CE=5V* I C=100mA, V CE=5V* I C=200mA, V CE=10V* Emitter Cut-Off Current I EBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage Static Forward Current Transfer Ratio V CE(sat) V BE(sat) V BE(on) h FE 3-229 ZTX658 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER SYMBOL MIN. 50 10 130 3300 TYP. MAX. UNIT MHz pF ns ns CONDITIONS. I C=20mA, V CE=20V f=20MHz V CB=20V, f=1MHz I C=100mA, V C=100V I B1=10mA, I B2=-20mA Transition Frequency f T Output capcitance Switching times C obo t on t off * Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% THERMAL CHARACTERISTICS PARAMETER Thermal Resistance:Junction to Ambient 1 Junction to Ambient 2 Junction to Case SYMBOL R th(j-amb)1 R th(j-amb)2 R th(j-case) MAX. 175 116 70 UNIT C/W C/W C/W Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum. 2.5 200 Max Power Dissipation - (Watts) Thermal Resistance (C/W) D=1 (D.C.) 2.0 t1 D=t1/tP tP C 1.5 as e te m pe 1.0 Am ra 100 D=0.5 bie tu nt t re em 0.5 0 per at u re D=0.2 D=0.1 Single Pulse -40 -20 0 20 40 60 80 100 120 140 160 180 200 0 0.0001 0.001 0.01 0.1 1 10 100 T -Temperature (C) Pulse Width (seconds) Derating curve Maximum transient thermal impedance 3-230 ZTX658 TYPICAL CHARACTERISTICS IC/IB=10 IC/IB=20 IC/IB=50 Tamb=25C 1.6 1.4 -55C +25C +100C +175C 1.6 IC/IB=10 VCE(sat) - (Volts) 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 VCE(sat) - (Volts) 0.01 0.1 1 10 20 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 hFE - Normalised Gain 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 +100C +25C -55C VCE=10V 1.6 300 1.4 -55C +25C +100C +175C IC/IB=10 hFE - Typical gain VBE(sat) - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 200 100 0.01 0.1 1 10 20 0 0.001 0.01 0.1 1 10 20 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC 1.0 -55C +25C +100C +175C VBE(sat) v IC Single Pulse Test at Tamb=25C 1.6 1.4 VCE=10V IC - Collector Current (Amps) VBE - (Volts) 1.2 1.0 0.8 0.6 0.4 0.2 0 0.001 0.01 0.1 1 10 20 0.1 0.01 D.C. 1s 100ms 10ms 1.0ms 0.1ms 0.001 1 10 100 1000 IC - Collector Current (Amps) VCE - Collector Voltage (Volts) VBE(on) v IC Safe Operating Area 3-231 |
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